{"schema":"hottub-news/story/v1","story":"st_iig2gs2p4jrt3uqpvcwa","title":"消息称三星电子加速平泽 P5 晶圆厂 PH1 DRAM 产线建设，PH2 或生产 NAND","title_en":"Samsung Electronics reportedly accelerates P5 wafer factory PH1 DRAM line construction in Pyeongtaek, PH2 may produce NAND","outlets":1,"brief":null,"page":"https://hottub.news/stories/samsung-electronics-reportedly-accelerates-p5-wafer-factory-ph1-dram-iig2gs2p4j","count":1,"items":[{"id":"n_iig2gs2p4jrt3uqpvcwa","seq":403866,"kind":"article","title":"消息称三星电子加速平泽 P5 晶圆厂 PH1 DRAM 产线建设，PH2 或生产 NAND","title_en":"Samsung Electronics reportedly accelerates P5 wafer factory PH1 DRAM line construction in Pyeongtaek, PH2 may produce NAND","url":"https://www.ithome.com/1/007/964.htm","summary":"IT之家 9 月 28 日消息，韩媒 ZDNET Korea 当地时间今日报道称，三星电子正加速推进平泽 P5 晶圆厂 PH1 阶段 DRAM 内存生产线的建设。 报道指出，三星电子已在本季度启动 P5 PH1 的洁净室建设，早于此前预期。按此进度推算，半导体制造设备进场时间应该落在 2027 年 7~8 月。 而消息人士最近表示，三星电子现要求在明年 5~6 月就进行设备导入，甚至希望在 2027Q1 就获取设备并暂存他处。 三星电子对提前投资 P5 项目的意愿非常强烈 。 另一方面，三星电子正与合作伙伴商讨将 P5 PH2 建成尖端 NAND 闪存生产线的想法。由于设备交期大幅延长，三星电子正要求合作伙伴提前备好相关零部件。","published":"2026-09-28T10:00:44Z","seen":"2026-09-28T10:47:55Z","lang":"zh","country":"CN","source":{"id":"kite-ithome-com-f1cdd0","name":"ithome.com","domain":"ithome.com","outlet":{"wikidata":"Q28413779","name":"IThome","type":"website","country":"CN","designations":["website"]}},"via":"kite-ithome-com-f1cdd0","entities":[{"id":"Q20718","name":"Samsung Electronics","type":"org"},{"id":"Q42154","name":"Pyeongtaek","type":"place"}],"story":"st_iig2gs2p4jrt3uqpvcwa","category":"economy-business","category_p":0.6399999856948853,"category2":"science-technology","sentiment":"neutral","tone":0.20999999344348907,"political":0.05999999865889549}]}